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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1940
DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= -2.0V(Min) @IC= -6A *Good Linearity of hFE *Complement to Type 2SC5197 APPLICATIONS *Power amplifier applications *Recommend for 55W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature
-0.8
A
PC
80
W
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1940
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ; IB= 0
-120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
B
-2.0
V
VBE(on)
Base-Emitter On Voltage
IC= -4A ; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -120V ; IE=0
-5
A
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-5
A
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -4A ; VCE= -5V
35
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
260
pF
fT
Current-Gain--Bandwidth Product
IC= -1A; VCE= -5V
30
MHz
hFE-1 Classifications R 55-110 O 80-160
isc Websitewww.iscsemi.cn
2


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